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  • High Voltage 4H-SiC Power MOSFETs with Boron doped gate oxide [2017]

    Category:
    Artículos
    Authors:
    María Cabello , Maxime Berthou , Josep Montserrat , José Rebollo , Philippe Godignon , Andrei Mihaila , María Rodríguez Rogina , Francisco Javier Sebastián Zúñiga , Alberto Rodríguez Alonso , Victor Soler
    Date:
    01 of January of 2017
    It Is a Part of:
    IEEE Transactions on Industrial Electronics